|KITA RESEARCH GROUP
- Nano-Space Function Design -
The University of Tokyo, Graduate school of Frontier Science
Department of Advanced Materials Science
On Apr 1, 2022, our research group has moved to Department of Advanced Materials Science, in Graduate School of Frontier
Sciences. We are "Nono-Space Funcition Design" group.
Materials science for functionality design of the nano-scaled ultrathin
films and their hetero-interfaces is now having a crucial role in the development
of advanced electron devices. Our researches are focusing on designing
the electric / magnetic / optical functions of device materials and their
stacks, especially for development of highly-efficient energy conversion
power devices and ultralow-power consuming nano-electron devices, toward
the future energy-saving society.
5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 Japan, The University of
Tokyo, Transdisciplinary Sciences Build. 501 (Room 5A6)
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 Japan, The University of Tokyo,
Engineering Building #4-310
||WHY DON'T YOU JOIN US?
★ Your visit is anytime welcomed.
Please contact Prof. Kita before your visit.
Tianlin Yang (D1) made an oral presentation, "Kinetic Study of SiC
Surface Nitridation in N2 Ambient with Simultaneous Oxidation in Passive
and Active Oxidation Modes" at the 9th International Symposium on
Control of Semiconductor Interfaces (ISCSI-IX)@Nagoya, and awarded for ISCSI-IX Young Researcher Award. Congratulation! (Sep 8, 2022). . See our publications See our gallery
Our group has moved to Department of Advanced Materials Science, Graduate
School of Frontier Science on Apr. 1 !! See our gallery
Our new paper on NO-anneal process on 4H-SiC MOS interface, written by
alumnus, Tae-Hyeon Kil(D3@2021), Tianlin Yang (D1), and Prof. Kita, "Unexpected
fixed charge generation by an additional annealing after interface nitridation
processes at the SiO2/4H-SiC (0001) interfaces" on Japanese Journal of Applied Physics, has been pulished on-line (Jun 13, 2022). See our publications
Prof. Kita delivered an invited talk "Clarification of Possible Factors to Determine Flat-Band Voltage in 4H-SiC Gate Stacks with Nitrogen Passivation Processes" and another contributed talk "Study on the Electrical Characteristics and Band Diagrams of Ga2O3 MOS Gate Stacks" at 241st ECS Meeting@Vancouver (May 31&Jun 1,2022). See our publications
Coming Conferences Information
2022 International Conference on Solid State Devices and Materials(SSDM2022) Sep 26-29, 2022@Makuhari Messe
9th International Syposium on Control of Semicondcutor Interfaces (ISCSI-IX)Sep 5-8, 2022@Nagoya Univ