東京大学大学院工学系研究科 マテリアル工学専攻 喜多研究室
JAPANESE
ENGLISH
KITA RESEARCH GROUP
- Nano-Space Function Design -
The University of Tokyo, Graduate school of Frontier Science
Department of Advanced Materials Science

MESSAGE
Welcome!
On Apr 1, 2022, our research group has moved to Department of Advanced Materials Science, in Graduate School of Frontier Sciences. We are "Nono-Space Funcition Design" group.
Materials science for functionality design of the nano-scaled ultrathin films and their hetero-interfaces is now having a crucial role in the development of advanced electron devices. Our researches are focusing on designing the electric / magnetic / optical functions of device materials and their stacks, especially for development of highly-efficient energy conversion power devices and ultralow-power consuming nano-electron devices, toward the future energy-saving society.


Koji KITA
Professor

5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561 Japan, The University of Tokyo, Transdisciplinary Sciences Build. 501 (Room 5A6)
TEL/FAX +81-4-7136-5456

7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 Japan, The University of Tokyo, Engineering Building #4-310
TEL/FAX +81-3-5841-7164
kita(at)scio.t.u-tokyo.ac.jp
WHY DON'T YOU JOIN US?
Your visit is anytime welcomed.
Please contact Prof. Kita before your visit.
NOTICE
Our group has moved to Department of Advanced Materials Science, Graduate School of Frontier Science on Apr. 1 !!
See our gallery



NEWS
Tianlin Yang (D1) made an oral presentation, "Kinetic Study of SiC Surface Nitridation in N2 Ambient with Simultaneous Oxidation in Passive and Active Oxidation Modes" at the 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-IX)@Nagoya, and awarded for ISCSI-IX Young Researcher Award. Congratulation! (Sep 8, 2022). . See our publications See our gallery

Our new paper on NO-anneal process on 4H-SiC MOS interface, written by alumnus, Tae-Hyeon Kil(D3@2021), Tianlin Yang (D1), and Prof. Kita, "Unexpected fixed charge generation by an additional annealing after interface nitridation processes at the SiO2/4H-SiC (0001) interfaces" on Japanese Journal of Applied Physics, has been pulished on-line (Jun 13, 2022). See our publications

Prof. Kita delivered an invited talk "Clarification of Possible Factors to Determine Flat-Band Voltage in 4H-SiC Gate Stacks with Nitrogen Passivation Processes" and another contributed talk "Study on the Electrical Characteristics and Band Diagrams of Ga2O3 MOS Gate Stacks" at 241st ECS Meeting@Vancouver (May 31&Jun 1,2022). See our publications

Coming Conferences Information
2022 International Conference on Solid State Devices and Materials(SSDM2022) Sep 26-29, 2022@Makuhari Messe
9th International Syposium on Control of Semicondcutor Interfaces (ISCSI-IX)Sep 5-8, 2022@Nagoya Univ


MEMBER RESEARCH PUBLICATION ACCESS GALLERY LINK
 
 KITA RESEARCH GROUP The University of Tokyo