Material engineering for functionality design of the nano-scaled ultrathin
films and their hetero-interfaces is now having a crucial role in the development
of advanced electron devices. Our researches are focusing on designing
the electric / magnetic / optical functions of device materials and their
stacks, especially for development of highly-efficient energy conversion
power devices and ultralow-power consuming nano-electron devices, toward
the future energy-saving society.
7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 Japan, The University of Tokyo,
Engineering Building #4-441
||WHY DON'T YOU JOIN US?
仛 Your visit is anytime welcomed at
Room #441 in engineering bld.#4. Please contact Prof. Kita before your visit.
Information on our group's new publications:
Takashi Hamaguchi's (graduated on Mar 2020) paper on temperature-induced
modulation of Al2O3-SiO2 interface dipole effects, on Jpn. J. Appl. Phys.
59, SMMA05 (2020).
Jun Koyanagi's (graduated on Mar 2020) paper on the improvement of 4H-SiC
PMOSFET characteristics by post-oxidation H2O annealing, on Jpn. J. Appl. Phys. 59, SMMA06 (2020).
Qiao Chu's (D1) paper on the analaysis of post-oxidation H2O annealing effects on 4H-SiC m-face MOS characteristics, on Mater. Sci. Semicond. Proc., 116, 105147 (2020)
Tae-Hyeon Kil's (D2) paper on anomalous NO annealing effects on SiC-SiO2 band alignment, on Appl. Phys. Lett.,116, 122103 (2020).
Dr. Adhi Dwi Hatmanto's (Sep 2019 graduated) report about the origin of oxidation-induced anomalous strain on SiC
surface, on Jpn. J. Appl. Phys., 59, SMMA02 (2020).
See our publications
Coming Conferences Information
Pacific Rim Meeting on Electrochemical & Solid-State Science (PRiME 2020, ECS, ECSJ, & KECS Joint Meeting) @Honolulu, HI (Oct.4-9, 2020).